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Dr Dongchen Qi Academic, Physics

Dr Qi's research interests lie in the area of experimental condensed matter physics, focusing on electronic structures and device physics of functional materials using advanced spectroscopic techniques based on synchrotron radiation. He is particularly interested in understanding important interface phenomena and physics essential to enabling organic electronics with experience in the design, processing and fabrication of organic electronic devices. He has also extensively investigated the electronic and magnetic properties of functional oxide materials.

During 1999 to 2003 Dr Qi studied physics in Peking University for his undergraduate education before he moved to Singapore. After receiving his PhD degree from the National University of Singapore in 2009, he spent another two years as a research fellow at the same institute. In 2012, he joined the Institute of Materials Science and Engineering (IMRE) as a staff scientist. He took up a faculty position in physics at La Trobe University in 2013. Dr. Qi was awarded the ARC Future Fellowship in 2017 to develop diamond nanoelectronics.

Dr Qi has published over 75 papers in internationally refereed journals including Nature Nanotechnology, Physical Review Letters, Journal of the American Chemical Society, Progress in Surface Science, Advanced Materials, etc.

Competitive Research Grants:

ARC Future Fellowship 2017-2021. D.-C. Qi, Enabling diamond nanoelectronics with metal oxide induced surface doping

ARC Discovery Project 2015-17, C.I. Pakes, L. Ley, J.C. McCallum, D.-C. Qi, Surface doping of diamond: A new platform for 2D carbon-based spintronics.


selected publications