Quasi-Free-Standing Epitaxial Graphene on SiC (0001) by Fluorine Intercalation from a Molecular Source Academic Article uri icon

abstract

  • We demonstrated a novel method to obtain charge neutral quasi-free-standing graphene on SiC (0001) from the buffer layer using fluorine from a molecular source, fluorinated fullerene (C(60)F(48)). The intercalated product is stable under ambient conditions and resistant to elevated temperatures of up to 1200 °C. Scanning tunneling microscopy and spectroscopy measurements are performed for the first time on such quasi-free-standing graphene to elucidate changes in the electronic and structural properties of both the graphene and interfacial layer. Novel structures due to a highly localized perturbation caused by the presence of adsorbed fluorine were produced in the intercalation process and investigated. Photoemission spectroscopy is used to confirm these electronic and structural changes.

authors

  • Wong, Swee Liang
  • Huang, Han
  • Wang, Yuzhan
  • Cao, Liang
  • Qi, Dongchen
  • Santoso, Iman
  • Chen, Wei
  • Wee, Andrew Thye Shen

publication date

  • September 27, 2011