Structural and Electronic Properties of the 6H-SiC(0001)/Al2O3 Interface Prepared by Atomic Layer Deposition
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Overview
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Research
keywords
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Al2O3
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Materials Science
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Materials Science, Multidisciplinary
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OXIDATION
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SI(100)
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SILICON-CARBIDE
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STATES
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SURFACES
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Science & Technology
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Technology
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atomic layer chemical vapor deposition
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gate dielectric
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interface states
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Additional Document Info
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Trans Tech Publications, Ltd.
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