Controlled shallow single-ion implantation in silicon using an active substrate for sub-20‐keV ions Academic Article uri icon

authors

  • Jamieson, DN
  • Yang, C
  • Hopf, T
  • Hearne, SM
  • Pakes, CI
  • Prawer, S
  • Mitic, M
  • Gauja, E
  • Andresen, SE
  • Hudson, FE
  • Dzurak, AS
  • Clark, RG

publication date

  • May 16, 2005