Superconducting transition in Nb nanowires fabricated using focused ion beam Academic Article uri icon

abstract

  • Making use of focused Ga-ion beam (FIB) fabrication technology, the evolution with device dimension of the low-temperature electrical properties of Nb nanowires has been examined in a regime where crossover from Josephson-like to insulating behaviour is evident. Resistance-temperature data for devices with a physical width of order 100 nm demonstrate suppression of superconductivity, leading to dissipative behaviour that is shown to be consistent with the activation of phase-slip below T(c). This study suggests that by exploiting the Ga-impurity poisoning introduced by the FIB into the periphery of the nanowire, a central superconducting phase-slip nanowire with sub-10 nm dimensions may be engineered within the core of the nanowire.

authors

  • Tettamanzi, GC
  • Pakes, CI
  • Potenza, A
  • Rubanov, S
  • Marrows, CH
  • Prawer, S

publication date

  • November 18, 2009