Initial Stages of Thermal Oxidation of 4H-SiC (11-20) Studied by Photoelectron Spectroscopy
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Overview
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Research
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CHANNEL MOBILITY
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Materials Science
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Materials Science, Multidisciplinary
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NO
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SIC(0001)
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Science & Technology
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Technology
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a-planes
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gate dielectric
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oxidation
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photoelectron spectroscopy
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Digital Object Identifier (DOI)
Additional Document Info
Publisher
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Trans Tech Publications, Ltd.
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