Electronic Structure of Graphite/6H-SiC Interfaces Conference Paper uri icon

abstract

  • We have studied the electronic structure of the interface between 6H-SiC{0001} and graphite. On n-type and p-type 6H-SiC(0001) we observe Schottky barriers of ÁSi b,n = 0.3±0.1 eV and ÁSi b,p = 2.7±0.1 eV, respectively. The observed barrier is face specific: on n-type 6H- SiC(0001) we find ÁC b,n = 1.3±0.1 eV. The impact of these barriers on the electrical properties of metal/SiC contacts is discussed.

authors

  • Seyller, Thomas
  • Emtsev, Konstantin V
  • Speck, Florian
  • Gao, Kun Yuan
  • Ley, Lothar

publication date

  • January 1, 2007